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NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
N16T1630C2B
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1M x 16 bit Overview
The N16T1630C2B is an integrated memory device containing a low power 16 Mbit SRAM built using a self-refresh DRAM array organized as 1,024,576 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N16T1630C2B is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard BGA packages compatible with other standard 1Mb x 16 SRAMs.
Features
* Single Wide Power Supply Range 2.7 to 3.6 Volts * Very low standby current 100A at 3.0V (Max) * Very low operating current 2.0mA at 3.0V and 1s (Typical) * Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion * Very fast access time 55ns address access option 35ns OE access time * Automatic power down to standby mode * TTL compatible three-state output driver * Green option for BGA package
Product Family
Part Number
N16T1630C2BZ
Package Type
48 - BGA
Operating Temperature
-40oC to +85oC
Power Supply (Vcc)
2.7V - 3.6V
Speed
70ns 55ns
Standby Operating Current (ISB), Current (Icc), Max Max @ 3.0V
100 A 3 mA @ 1MHz
N16T1630C2BZ2 Green 48 - BGA
Pin Configuration (Top View)
1 A B C D E F G H
LB I/O8 I/O9 VSS VCC
Pin Description
Pin Name A0-A19 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected
2
OE UB I/O10 I/O11 I/O12
3
A0 A3 A5 A17 NC A14 A12 A9
4
A1 A4 A6 A7 A16 A15 A13 A10
5
A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11
6
CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC
I/O14 I/O13 I/O15 A18 A19 A8
48 Ball BGA 6 x 8 mm
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Functional Block Diagram
N16T1630C2B
Address Inputs A0 - A19
Address Decode Logic
1M x 16 bit RAM Array
Input/ Output Mux and Buffers
I/O0 - I/O7
I/O8 - I/O15 CE1 CE2 WE OE UB LB
Control Logic
Functional Description
CE1 H X L L L L CE2 X L H H H H WE X X X L H H OE X X X X3 L H UB X X H L1 L1 L
1
LB X X H L1 L1 L1
I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z
MODE Standby2 Standby2 Standby Write Read Active
POWER Standby Standby Standby Active Active Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF
1. These parameters are verified in device characterization and are not 100% tested
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
NanoAmp Solutions, Inc. Absolute Maximum Ratings1
Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER
N16T1630C2B
Rating -0.3 to VCC+0.3 -0.3 to 4.5 500 -40 to 125 -40 to +85 260oC, 10sec Unit V V mW
o
C
oC oC
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item Supply Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Read/Write Operating Supply Current @ 1 s Cycle Time2 Read/Write Operating Supply Current @ 70 ns Cycle Time2 Maximum Standby Current Symbol VCC VIH VIL VOH VOL ILI ILO ICC1 ICC2 IOH = -0.2mA IOL = 0.2mA VIN = 0 to VCC OE = VIH or Chip Disabled VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VCC=3.6 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 3.0 V Test Conditions Min. 2.7 2.2 -0.3 VCC-0.2 0.2 0.5 0.5 5.0 25.0 Typ1 3.0 Max 3.6 VCC+0.3 0.6 Unit V V V V V A A mA mA
ISB1
100.0
A
1. Typical values are measured at Vcc=Vcc Typ., TA=25C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system.
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
NanoAmp Solutions, Inc. Timing Test Conditions
Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Operating Temperature
N16T1630C2B
0.1VCC to 0.9 VCC 5ns 0.5 VCC -40 oC to +85 oC
Output Load Circuit
VCC 14.5K I/O 14.5K 30 pF
Output Load
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc.
N16T1630C2B
Timing
Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output Byte Select to Valid Output Chip Enable to Low-Z output Output Enable to Low-Z Output Byte Select to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Byte Select Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Enable to End of Write Address Valid to End of Write Byte Select to End of Write Write Pulse Width Address Setup Time Write Recovery Time Write to High-Z Output Data to Write Time Overlap Data Hold from Write Time End Write to Low-Z Output Symbol tRC tAA tCO tOE tLB, tUB tLZ tOLZ tBLZ tHZ tOHZ tBHZ tOH tWC tCW tAW tBW tWP tAS tWR tWHZ tDW tDH tOW 25 0 5 5 5 5 0 0 0 10 55 50 50 50 50 0 0 25 25 0 5 25 25 25 -55 Min. 55 55 55 30 55 5 5 5 0 0 0 10 70 55 55 55 55 0 0 25 25 25 25 Max. Min. 70 70 70 35 70 -70 Max. Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
NanoAmp Solutions, Inc. Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC Address tAA tOH
N16T1630C2B
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC Address
tAA
tHZ
CE1 tCO CE2 tLZ tOE OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z tBHZ Data Valid tOHZ
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
NanoAmp Solutions, Inc. Timing Waveform of Write Cycle (WE control)
tWC Address tAW CE1 tCW CE2 tBW LB, UB tAS WE tDW High-Z Data In tWHZ Data Out tWP
N16T1630C2B
tWR
tDH
Data Valid tOW High-Z
Timing Waveform of Write Cycle (CE1 Control)
tWC Address tAW CE1 (for CE2 Control, use inverted signal) LB, UB tWP WE tDW Data In tLZ Data Out tWHZ tDH tCW tAS tBW tWR
Data Valid
High-Z
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Ball Grid Array Package
A1 BALL PAD CORNER (3) D 0.230.05 0.900.10
N16T1630C2B
1. 0.300.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e Z
SD
e SE
BOTTOM VIEW
Dimensions (mm)
e = 0.75 D 60.10 E SD 80.10 0.375 SE 0.375 J 1.125 K 1.375 BALL MATRIX TYPE FULL
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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NanoAmp Solutions, Inc. Ordering Information
N16T1630C2B
N16T1630C2BX(x)-XXI
55 = 55ns 70 = 70ns Z = BGA Z2 = Green BGA
Performance Package
Revision History
Revision A B C D E F Date January 2003 August 2003 September 2003 March 2004 August 2004 January 2005 Change Description Initial Preliminary Release Corrected typo for Ioh and Iol Increased Isb to 100uA at 3V Add test conditions Remove TSOP Package Changed ball(E3) from Vss to NC Added Green package offering
(c) 2004, 2005 NanoAmp Solutions, Inc. All rights reserved. NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice. NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications. NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC#14-02-007 REV F ECN# 01-1103) The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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